LM74610QDGKRQ1 TI
| Available |
LM74610QDGKRQ1 TI
• Qualified for Automotive Applications
• AEC-Q100 Qualified With the Following Results: – Exceeds HBM ESD Classification Level 2 – Device CDM ESD Classification Level C4B
• Maximum reverse voltage of 45 V
• No Positive Voltage limitation to Anode Terminal
• Charge Pump Gate Driver for External N-Channel MOSFET
• Lower Power Dissipation than Schottky Diode/PFET Solutions
• Low Reverse Leakage Current
• Zero IQ
• Fast 2-µs Response to Reverse Polarity
• -40°C to +125°C Operating Ambient Temperature
• Can be Used in OR-ing Applications
• Meets CISPR25 EMI Specification
• Meets Automotive ISO7637 Transient Requirements with a Suitable TVS Diode
• No Peak Current Limit
• Qualified for Automotive Applications
• AEC-Q100 Qualified With the Following Results: – Exceeds HBM ESD Classification Level 2 – Device CDM ESD Classification Level C4B
• Maximum reverse voltage of 45 V
• No Positive Voltage limitation to Anode Terminal
• Charge Pump Gate Driver for External N-Channel MOSFET
• Lower Power Dissipation than Schottky Diode/PFET Solutions
• Low Reverse Leakage Current
• Zero IQ
• Fast 2-µs Response to Reverse Polarity
• -40°C to +125°C Operating Ambient Temperature
• Can be Used in OR-ing Applications
• Meets CISPR25 EMI Specification
• Meets Automotive ISO7637 Transient Requirements with a Suitable TVS Diode
• No Peak Current Limit
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